Applications of Each Precursor Material in TSMC Advanced Process

All substances are ALD/CVD thin-film deposition precursors (metal-organic sources, high-purity electronic specialty chemicals). They are deployed for logic chips, interconnects, high-k gate dielectrics, barrier layers, divided into Front-End-Of-Line (FEOL) and Back-End-Of-Line (BEOL).

We are proud to introduce the following precursors for ALD/CVD.

Dimethylzinc (DMZn), 99.9999%

Tris(methylcyclopentadienyl)yttrium(III), 99.5%

2,4,6,8-Tetramethylcyclotetrasiloxane (TMCTS), 99.99999%

Titanium Tetrachloride (TiCl₄), Ti ≥ 99.9999%

Tetrakis(ethylmethylamido)zirconium (TEMAZ), Zr ≥ 99.9999%

Tetrakis(dimethylamido)titanium (TDMAT), Ti ≥ 99.9999%

Pentakis(dimethylamido)tantalum (PDMAT), 99.9999%

We offer various size packing.  

send inquires to: jzhang@phentex.com